to - 220 a plastic - encapsulate diodes sbl1 6 30,35,40,45,50,60 schottky barrier rectifier features ? schottky barrier chip ? guard ring di e construction for transient protection ? low power loss,high efficiency ? high surge capability ? high current capability and low forward voltage drop ? for use in low voltage, high frequency inverters,free wheeling, and polarity protection applications maximum ratings ( t a =25 unless otherwise noted ) value symbol parameter sbl 1 6 30 sbl 1 6 35 sbl 1 6 40 sbl 1 6 45 sbl 1 6 50 sbl 1 6 60 unit v rrm p eak repetitive reverse voltage v rwm working peak reverse voltage v r dc blocking voltage 30 35 40 45 50 60 v v r(rms) rms reverse voltage 21 24.5 28 31.5 35 42 v i o average rectified output current @ t c = 9 5 16 a i fsm non - repetitive peak f orward surge current 8.3ms half sine wave 275 a p d power d issipation 2 w r ja thermal r esistance from j unction to a mbient 50 /w t j junction t emperature 125 t stg s torage t emperature - 5 5 ~+ 150 to - 220 a 1 . cathode 2 . anode 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a =25 unless otherwise specified) parameter symb ol device test conditions m in typ m ax u nit sbl1 6 30 30 sbl1 6 35 35 sbl1 6 40 40 sbl1 6 45 45 sbl1 6 50 50 reverse voltage v (br) sbl1 6 60 i r = 1 m a 60 v SBL1630 v r = 30 v sbl1635 v r = 35 v sbl1640 v r = 40 v sbl1645 v r = 45 v sbl1650 v r = 50 v reverse c urrent i r sbl1660 v r = 60 v 1 m a sbl1 6 30 - 1 6 45 0.5 7 forward volta ge v f sbl1 6 50, 16 60 i f = 1 6 a 0.7 5 v ty pical j unction capa citance c j SBL1630 - 1660 v r = 4 v,f=1mhz 700 pf 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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